ram random access memory

Brand Name:Alliance Memory, Inc.

Model Number:AS6C4016-55ZIN

..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby current : 4 µA(TYP.) Single 2....

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. Specification Of W9825G6KH-6I Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 256Mbit Memory Organization 16M x 16 Memory

Brand Name:Original Factory

Model Number:MT53E256M16D1DS-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200​ Product Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1DS-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2DS-053 AUT:E

Place of Origin:CN

Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory Product Description Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 12Gbit Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E1G64D4NW-046 WT:C

Place of Origin:CN

Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046BWT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT61M256M32JE-12 AAT:A

Place of Origin:CN

...Memory IC Chip 8Gbit Parallel GDDR6 SGRAM Memory IC FBGA-180 Product Description Of MT61M256M32JE-12 AAT:A MT61M256M32JE-12 AAT:A is 2-Channels 8Gbit Parallel GDDR6 SGRAM Memory IC for Networking. MT61M256M32JE-12 AAT:A——The GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory...

Brand Name:NUMONYX

Model Number:M29W640GT70NA6E

Place of Origin:Original

... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E IT:E

Place of Origin:CN

... DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E IT:E Part Number MT40A1G16KD-062E IT:E Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time -

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-053 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips Product Description Of MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-053 WT:B is 8Gbit SDRAM-Mobile LPDDR4 Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E:E

Place of Origin:CN

...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 AIT:B

Place of Origin:CN

... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM -

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Original Factory

Model Number:H9HCNNNBKUMLHR-NMOR

Place of Origin:CN

H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200​ Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200​. Specification...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:Original Factory

Model Number:S70GL02GT12FHIV10

Place of Origin:CN

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory...