ram random access memory

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4008C1D-KI10

...RAM(5.0V Operating). Operated at Commercial and Quick Detail: 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory...

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

...-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as ...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...RAM Product Description The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

... MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It...

Place of Origin:PHILIPPINE

Brand Name:Ramtron International Corporation

Model Number:FM24C256-SE

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:original

Model Number:FM25L256-G

Place of Origin:original

... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Place of Origin:PHILIPPINE

Brand Name:Ramtron International Corporation

Model Number:FM1608-120

...64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data ...

Brand Name:Diebold Nixdorf

Model Number:19063046000A 19-063046-000A

Place of Origin:China

...RAM MDL 128M*64 SDRAM D DDR2 19063046000A 19-063046-000A The Diebold IC MEM RAM MDL 128M*64 SDRAM D DDR2 refers to a specific memory module used in Diebold Nixdorf's equipment, such as automated teller machines (ATMs) or self-service kiosks. Here's what the different elements of the product name typically indicate: IC MEM RAM: This indicates that it is an integrated circuit (IC) memory module used for random access

Brand Name:Alliance Memory, Inc.

Model Number:AS7C34098A-10JIN

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256B-15PIN

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time • Low power consumption – Active:

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12TJCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12JCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Applications Of MT41K256M16TW-107 ...

Brand Name:CYPRESS

Model Number:FM25V10-GTR

Place of Origin:original

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice for applications ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C316098A-10BIN

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-10TCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256A-12JCN

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C4096A-12JIN

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Pin ...

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips​ Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4X Memory Size 4Gbit Memory Organization 256M x 16 Memory...