pnp junction transistor

Place of Origin:US

Brand Name:Original

Model Number:2SC2922 2SA1216

Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1015-GR

Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (...

Place of Origin:US

Brand Name:Original

Model Number:2SA1015-Y

Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (...

Place of Origin:US

Brand Name:Original

Model Number:2SB1560 2SD2390

Product Detail Manufacturer Sanken Packaging Bulk Part Status Active Transistor Type PNP/NPN - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 2.5V @ 7mA, 7A Current - Collector ...

Brand Name:Original Brand

Model Number:MMDT2222A

Place of Origin:CN

...Transistor MMDT2222A (NPN) / Integrated Circuit IC FEATURES: Complementary PNP Type available MMDT2907A Package: SOT-323 MAXIMUM RATINGS (TA=25 °c unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 200 mW TJ Junction...

Brand Name:Original Brand

Model Number:MMDT2222A

Place of Origin:CN

...Transistor MMDT2222A (NPN) / Integrated Circuit IC FEATURES: Complementary PNP Type available MMDT2907A Package: SOT-323 MAXIMUM RATINGS (TA=25 °c unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 200 mW TJ Junction...

Model Number:PZT2907A

Place of Origin:original factory

PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction...

Brand Name:Omron

Model Number:NX1P2-1140DT1

Place of Origin:China

...Transistor I/O (PNP) 1.5 MB Memory Descriptions Descriptions of Omron NX1P2-1140-DT1. CPU;40 Built-in I/O points;8 MaX aXes;4 Motion control aXes;PNP;NX1P Series Sysmac NX1P CPU with 40 Digital Transistor I/O (PNP) 1.5 MB memory EtherCAT (4 servo axes 4 PTP axes 16 EtherCAT nodes) EtherNet/IP and 2 serial option ports Digital Inputs = 24 / Digital Output Type = Transistor / Number of Transistor

Brand Name:Hua Xuan Yang

Place of Origin:ShenZhen China

Model Number:MMBT4401

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA56

...Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 225 mW RΘJA Thermal Resistance From Junction To Ambient 555 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBT4403

...Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA44

...Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Brand Name:Hua Xuan Yang

Place of Origin:ShenZhen China

Model Number:MMBT4401

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA56

...Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 225 mW RΘJA Thermal Resistance From Junction To Ambient 555 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBT4403

...Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA44

...Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction...

Brand Name:Infineon

Model Number:IRFS4227TRLPBF

Place of Origin:Original

Infineon Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically ...

Brand Name:TOSHIBA

Model Number:TK39A60W,S4VX

Place of Origin:Original

TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS...

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Model Number:GKB-M0524PA

Place of Origin:China

Brand Name:Zhongde

...PNP NO Sensor Oil Prevention With Good Anti - Interference Ability Description Two specific types sensors are available; PNP and NPN. The difference is a result of the internal circuit design and type of transistors used. PNP and NPN has nothing to do with whether the sensor is normally open (N/O) or normally closed (N/C), i.e. a PNP sensor may be either N/O or N/C as can an NPN be either N/O or N/C. Why two types? The selection of a PNP