pnp junction transistor

Brand Name:Lingxun

Place of Origin:China

...Junction MOSFET Power Transistor Anti EMI For SMPS Product Description: One of the standout features of this Super Junction MOSFET is its 100% avalanche testing. This testing ensures that the device can withstand high energy transients, making it an excellent choice for applications that may experience occasional power surges or spikes. In addition, this Super Junction...

Brand Name:Lingxun

Model Number:LCS65R1K0D

Place of Origin:China

... 880mΩ Super Junction Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V RDSON-typ VGS=10V:880mΩ FEATURES • High Dense Super Junction Design • Excellent Gate...

Brand Name:Anterwell

Model Number:PBSS4112PAN

Place of Origin:original factory

... (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: ...

Brand Name:Toshiba

Model Number:2SC4793

Place of Origin:JAPAN

...PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications Product Attribute Attribute Value Mounting Style: Through Hole Transistor...

Brand Name:NXP

Model Number:BSH201

Place of Origin:CHINA

... = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2SA1015

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal ...

Brand Name:ON

Model Number:NJW0281G

Place of Origin:USA

... of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. Features •

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2SA1015

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal ...

Brand Name:TOSHIBA

Model Number:IRF740PBF

Place of Origin:Original Factory

Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best ...

Brand Name:Fairchild Semiconductor

Model Number:PN4258

Place of Origin:CHINA

General Description PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 12V Vce ...

Place of Origin:/

Brand Name:ON

Model Number:LM317MDTRKG

...PNP Transistors LM317MDTRKG ON TO-252 Positive Voltage Regulator Features • Output Current in Excess of 500 mA • Output Adjustable between 1.2 V and 37 V • Internal Thermal Overload Protection • Internal Short Circuit Current Limiting • Output Transistor...

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Brand Name:Nexperia

Model Number:BC846B 1B

Place of Origin:CN

... purpose transistor SMD SOT23 discrete Semiconductors Features • Low Current (max. 100 Ma) • Low Voltage (max. 65 V). Applications • General Purpose Switching And Amplification. Description Npn Transistor In A Sot23 Plastic Package. Pnp Complements: ...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 ...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 ...

Brand Name:FAIRCHILD

Model Number:KSP2907A

Place of Origin:100% new & original

...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 625 mW TJ Junction

Brand Name:FAIRCHILD

Model Number:KSP2907A

Place of Origin:100% new & original

...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 625 mW TJ Junction

Brand Name:FAIRCHILD

Model Number:KSP2907A

Place of Origin:100% new & original

...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 625 mW TJ Junction