sd memory speed

Brand Name:Etron Technology, Inc.

Model Number:EM6HE08EW3F-12H

Place of Origin:original

...Memory Chips Data Storage Processing Product Description: This is a 8GB Flash Memory Chip, model EM6HE08EW3F-12H. It features a 12V power supply and offers a wide range of features, including high-speed read/write, fast booting, low power consumption, and safe data protection. Product Parameters: - Capacity: 8GB - Model: EM6HE08EW3F-12H - Power Supply: 12V - Data Transfer Speed...

Brand Name:Macronix

Model Number:MX25L8006EZNI-12G

Place of Origin:original

...-3.6V - Package: SOIC-16 - Operating Temperature: -40 °C to +85 °C - Data Retention: 10 Years - Read Speed: 9MB/s (max) - Write Speed: 2MB/s (max) - Endurance: 100,000 Program/Erase Cycles (min) - Shock/Vibration Testing: 200G/10G (min) This

Brand Name:Winbond Electronics

Model Number:W25N02KVZEIR

Place of Origin:original

MX30UF1G18AC-TI Flash Memory Chip High Speed Reliable Storage for Your Devices Product Description: The MX30UF1G18AC-TI is a 1GB NAND Flash Memory Chip designed for industrial applications. It features a high-speed, low-power operation and provides a ...

Brand Name:MXIC

Model Number:MX25V4035FM2I

Place of Origin:Mulit-origin

MX25V4035FM2I Flash Memory Chips 45-Byte High-Speed Storage Solution Product Listing: MX25V4035FM2I Flash Memory Chips Features: • Capacity: 4Mbit (512Kb x 8) • Voltage supply: 2.7V - 3.6V • Access time: 55ns • Package: 8-pin SOIC • ...

Brand Name:MXIC

Model Number:M25P128-VMF6TP TR

Place of Origin:Mulit-origin

M25P128-VMF6TP TR Flash Memory Chips High Capacity And Fast Data Transfer Speed Product Listing: M25P128-VMF6TP TR Flash Memory Chips Product Parameters: • Capacity: 128Mbit • Organization: 16M x 8 • Voltage Supply: 2.7V - 3.6V • Access Time: 85ns • ...

Brand Name:Microchip Technology

Model Number:SST25VF512A-33-4C-SAE

Place of Origin:original

SST25VF512A-33-4C-SAE Flash Memory Chips Low Power Consumption High Speed Data Storage Product Description: The SST25VF512A-33-4C-SAE is a 512Kb SPI Flash memory chip that is ideal for data storage and code execution applications. It is offered in a 4x5mm ...

Brand Name:Microchip Technology

Model Number:AT24C08C-PUM

Place of Origin:original

...'s CMOS Technology. It offers an easy to use, fast and reliable data storage solution that is ideal for products that require a non-volatile memory. Parameters: - Supply Voltage: 1.7V to 5.5V - Operating Temperature: -40°C to +85°C -

Brand Name:Macronix

Model Number:MX25U25635FZ2I-10G

Place of Origin:original

MX25U25635FZ2I-10G Flash Memory Chips High-Speed Storage Capacity Item: MX25U25635FZ2I-10G Flash Memory Chip Specifications: - Capacity: 256Mb - Voltage: 2.7V-3.6V - Interface: SPI - Program/Erase Cycles: 10,000 - Operating ...

Brand Name:Macronix

Model Number:MX66L51235FMJ-10G

Place of Origin:original

MX66L51235FMJ-10G 16-SOP Flash Memory Chip for High Speed Data Storage and Transfer MX66L51235FMJ-10G Flash Memory Chips Product Parameters: Capacity: 512Mbit Voltage: 3.3V Bus width: 8-bit Organization: 16M x 32 Architecture: Page ...

Brand Name:Macronix

Model Number:MX25U25645GZ4I00

Place of Origin:original

MX25U25645GZ4I00 Flash Memory Chip - High Capacity Fast Speed Reliable Storage Product Listing: MX25U25645GZ4I00 Flash Memory Chip • Capacity: 256Mb • Interface: SPI • Pin Count: 48 • Access Time: 80MHz • Operating Voltage: 2.7V - 3.6V • ...

Brand Name:Micron Technology Inc.

Model Number:MT41K64M16TW-107 IT:J

Place of Origin:original

... Organization: 8 Meg x 16, 4 Meg x 32, 2 Meg x 64 • Speed: 107ns • Voltage: 1.8V/3.3V • Package: TSOP48, FBGA100 • Technology: SDR/DDR SDRAM • High-speed data transfer: up to 133MHz • Low-power operation: 3.3V ±0.3V, 1.8V ±0.15V • Robust,

Brand Name:Macronix

Model Number:MX66L51235FMI-10G

Place of Origin:original

MX66L51235FMI-10G Flash Memory Chips High-speed Reliable Storage for Your Needs Product Listing: MX66L51235FMI-10G Flash Memory Chips Features: - Capacity: 512Mb - Interface: 10G Serial - Voltage: 1.8V/3.3V - Programmable Page Size: 256B/512B/...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2B4-6A IT:G

Place of Origin:Multi-origin

MT48LC16M16A2B4-6A IT:G Flash Memory Chips Product Description: The MT48LC16M16A2B4-6A IT:G Flash Memory Chips provide high-speed access and low power consumption for a wide range of applications. This device is ideal for storing large amounts of data...

Brand Name:Micron Technology Inc.

Model Number:MT29F2G01ABAGDWB-IT:G

Place of Origin:Multi-origin

MT29F2G01ABAGDWB-IT:G Flash Memory Chips Product Features: - 2 Gigabit (Gb) NAND Flash memory - 3V supply voltage - 8-bit bus width - Package size: 11.5 mm x 13 mm - Support for ONFI 2.1 / Toggle 1.0 - High-speed data transfer rate - Advanced wear-leveling...

Brand Name:Cypress Semiconductor Corp

Model Number:S34ML04G100TFI000

Place of Origin:Multi-origin

...Memory Chips Product Description: The S34ML04G100TFI000 is a NOR Flash memory chip from Samsung, providing fast read access times and low power consumption. It features a 4Gbit (512Mb) capacity and an advanced Single Level Cell (SLC) architecture. It is designed to provide a high-speed...

Brand Name:Macronix

Model Number:MX25L3206EZUI-12G

Place of Origin:Multi-origin

...Memory Chip Product Type: Flash Memory Chip Storage Capacity: 12G Interface: SPI Voltage: 2.7-3.6V Operating Temperature: -40 to 85°C Operating Frequency: 25MHz Package Type: WSON 8x6mm Data Retention: 40 Years Write Endurance: 100K Cycles Read Speed: 80Mbps Write Speed...

Brand Name:Original Factory

Model Number:S80KS5122GABHV023

Place of Origin:CN

...Memory Chip S80KS5122GABHV023 Integrated Circuit Chip 24FBGA Memory IC​ Product Description Of S80KS5122GABHV023 S80KS5122GABHV023 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S80KS5122GABHV023 Part Number S80KS5122GABHV023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 512Mbit Memory...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 WT:B

Place of Origin:CN

... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word,

Brand Name:Micron Technology Inc.

Model Number:MT40A1G8SA-062E:R

Place of Origin:Multi-origin

... Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR4 Memory Size 8Gbit Memory Organization 1G x 8 Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time - Word, Page 15ns Access Time 19 ns ...

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory