power discrete devices n channel mosfet

Brand Name:Lingxun

Place of Origin:China

... and lower power dissipation. This means that your devices will run more efficiently, saving you energy and reducing the risk of overheating or other issues. In addition to its high performance, the Super Junction MOSFET also offers a large EMI margin,

Brand Name:Vishay Siliconix

Model Number:IRFBE30PBF

Place of Origin:original

...MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material ​ Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance, low gate charge, and a fast switching capability. With a maximum drain current of 30A, this device is ideal for use in power...

Brand Name:INFINEON

Model Number:IRFB4227PBF

IRFB4227PBF TO-220 N-channel 200V/65A in-line MOSFET Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFB4227PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

Product Description BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this ...

Brand Name:Infineon

Model Number:IPB018N10N5ATMA1

Place of Origin:USA

Discrete Semiconductors IPB018N10N5ATMA1 PG-TO263-3 MOSFET Product Description: MOSFET OptiMOSTM5Power-Transistor,100V Features​: •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

Place of Origin:Malaysia

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device...

Brand Name:IOR

Model Number:IRF3205PBF

Place of Origin:CHINA

...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:Original Factory

Model Number:IPDQ60R040S7XTMA1

Place of Origin:CN

Discrete Semiconductor Products IPDQ60R040S7XTMA1 MOSFETs Transistors Product Description Of IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Power MOSFETs are superjunction MOSFETs that address xEV applications where MOSFETs are switched at low frequency. Specification Of IPDQ60R040S7XTMA1 Part Number IPDQ60R040S7XTMA1 FET Type N-Channel Technology MOSFET...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY4812

HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ...

Brand Name:Ti

Model Number:FDS6681Z

... that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Extended VGSS range (–25V) for

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and

Place of Origin:MALAYSIA

Brand Name:FREESCALE

Model Number:ELM1314-30F

ELM1314-30F is a Single N-channel MOSFET . Part NO: ELM1314-30F Brand: FREESCALE Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, ...

Brand Name:Vishay

Model Number:IRFP9240PBF

Place of Origin:Original

... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Brand Name:Texas Instruments

Model Number:TPS22965DSGR

Place of Origin:USA

TPS22965DSGR Power Switch/Driver 1:1 N-Channel 6A 8-WSON (2x2) The TPS22965x is a single channel load switch that provides configurable rise time to minimize inrush current. The device contains an N-channel MOSFET that can operate over an input voltage ...

Brand Name:JUYI

Model Number:JY15M

Place of Origin:China

...on‐resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 40V/130A, RDS(ON)