pnp transistor array

Brand Name:Infineon

Model Number:IRFS4227TRLPBF

Place of Origin:Original

Infineon Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically ...

Brand Name:TOSHIBA

Model Number:TK39A60W,S4VX

Place of Origin:Original

TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS...

Brand Name:ECHIP

Model Number:TIP42C

Place of Origin:CHINA

...PNP Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching Description The TIP41C is a base island technology NPN power transistor...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2SA1015

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal ...

Brand Name:STMicroelectronics

Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P

Place of Origin:CHINA

...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:2SA1015

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal device Y=...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal ...

Brand Name:STMicroelectronics

Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P

...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP

Brand Name:ST

Model Number:D45H8

Place of Origin:CHINA

D45H8 NPN PNP Transistors Bipolar (BJT) Transistor PNP 60V 10A 50W Through Hole TO-220AB Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits ...

Brand Name:ZETEX

Model Number:FMMT734TA

Place of Origin:CHINA

...DarliCM GROUPon Transistor hFE > 20k @ 100mA for High Gain  High Gain Hold-Up to 5A  625mW Power Dissipation  Complementary DarliCM GROUPon ...

Brand Name:TI

Model Number:ULQ2003ADR

Place of Origin:Taiwan

... Applications description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current Darlington transistor arrays. Each

Brand Name:Texas Instruments

Model Number:TPD2S300YFFR

Place of Origin:china

PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Status Balance ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1941 2SC5198

Product Detail Product Category: Bipolar Transistors Mounting Style: Through Hole Transistor Polarity: PNP Configuration: Single Emitter Voltage VCEO Max: - 140 V Base Voltage VCBO: - 140 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1837/2SC4793

Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:2SC2922 2SA1216

Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1015-GR

Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (...

Place of Origin:US

Brand Name:Original

Model Number:2SA1015-Y

Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (...