pnp transistor array

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:A94

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High Breakdown Voltage MARKING A94=Device code Solid dot=Green molding compound device, if none,the normal ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772M

TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ...

Place of Origin:US

Brand Name:Original

Model Number:TIP42C

Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:MJ15015 MJ15016

Product Detail Packaging Tray Part Status Active Transistor Type NPN/PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:2sa1494 2sc3858

Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:MJL21195G MJL21196G

Product Detail Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 16A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, ...

Place of Origin:US

Brand Name:Original

Model Number:2SA2210

Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 20A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 350mA, 7A Current - Collector Cutoff (Max) ...

Place of Origin:US

Brand Name:Original

Model Number:2SA2222

Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 6A Current - Collector Cutoff (Max) ...

Place of Origin:US

Brand Name:Original

Model Number:2SA1015-Y

Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

IRFP4568PBF Mosfet Power Transistor 150V 171 5.9mOhm N-Channel Mos Solar Power Inverter Applications SMPS UPS Solar power inverter DC motor drives Battery powered applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Description Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel ...

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% ...

Brand Name:Infineon Technologies

Model Number:BSC109N10NS3G

Place of Origin:Original

BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet 100V 63A TDSON-8 OptiMOS Features · Very low gate charge for high frequency applications ·Optimized for dc-dc conversionN-channel, normal level ·Excellent gate charge x RDs(on)product (FOM) ·...

Brand Name:STMicroelectronics

Model Number:BTB04-600SL

Place of Origin:China

BTB04-600SL Triacs 4 Amp 600 Volt TO-220-3 Transistors DESCRIPTION TheBTB04-600SL4quadrantsTRIACisintended forgeneralpurposeapplicationswherehighsurge current capability is required, such as lighting, cordedpowertools,industrial. This TRIAC features a gate...

Brand Name:Vishay

Model Number:IRFP9240PBF

Place of Origin:Original

IRFP9240PBF P-Channel MOSFET 200V 12A TO-247-3 Transistors FEATURES •Dynamic dV/dt rating •Repetitive avalanche rated •P-channel •Isolated central mounting hole •Fast switching •Ease of paralleling •Simple drive requirements •Material categorization: for ...

Model Number:2N3906

Place of Origin:original factory

PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: ...

Brand Name:Anterwell

Model Number:2SB1560

Place of Origin:original factory

Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell Darlington 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ...

Brand Name:Anterwell

Model Number:STA434A

Place of Origin:original factory

STA434A PNP + NPN Darlington H-bridge Absolute maximum ratings Symbol Specification Unit NPN PNP VCBO 80 -60 V VCEO 60 -60 V VEBO 6 -6 V IC 4 -4 A ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%) A PT 4 (Ta=25°C) W 20 (Tc=25°C) W Tj 150 °C Tstg –40 to +150 °C ...