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4ghz gan rf power transistor

from 117 Products

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor

China TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor on sale
TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors

China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors on sale
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VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency

China HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency on sale
...RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency

China Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency on sale
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

200W GaN RF Power Amplifier Module 2400-2500MHz for Industrial Use

China 200W GaN RF Power Amplifier Module 2400-2500MHz for Industrial Use on sale
...Power GaN RF Power Amplifier 200W | 2400–2500MHz Wideband Module | Industrial & Communication Applications Item Detials: The LDK-TZ-GAN-200 High Power GaN RF Power Amplifier Module is engineered with advanced Gallium Nitride (GaN) technology to deliver exceptional RF......
Shenzhen Ladasky Technology Co.,Ltd

Address: No.11, Plant Road, Tongle Community, Baolong Street, Longgang District, Shenzhen

433MHz 20W GaN RF Power Amplifier Module For Anti Drone System Small Size

China 433MHz 20W GaN RF Power Amplifier Module For Anti Drone System Small Size on sale
... GaN RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In ......
Padi Fly Technology Co., Ltd

Address: Building G,No.2,Nikeng 3rd Road,Guanlan Street, Longhua District, Shenzhen

RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors

China RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors on sale
MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

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