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1270nm N Inp Substrate

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1270nm n inp substrate

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N-InP Substrate Bandwidth 02:2.5G Wavelength 1270nm Epi Wafer For FP Laser Diode

...InP substrate bandwidth 02:2.5G wavelength 1270nm epi wafer for FP laser diode N-InP substrate FP Epiwafer's Overview Our N-InP Substrate FP Epiwafer is a high-performance epitaxial wafer designed for the fabrication of Fabry-Pérot (FP) laser diodes, specifically optimized for optical communication applications. This Epiwafer features an N-type Indium Phosphide (N-InP) substrate......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work

InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

P Type , InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade

...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP......

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate......

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

P0010 CWDM DFB TOSA Pigtail FC SC APC UPC Analog Laser 1.25G 2.5G 1270nm To 1610nm CATV

CWDM DFB TOSA Pigtail Receptacle FC SC APC UPC Analog Laser 1.25G 2.5G 1270nm to 1610nm CATV Description The TOSA-Cxxxx-DFB-2.5G-SCAPC-A Series are 1270nm~1610nm InGaAsP/InP CWDM MQW-DFB laser diode modules designed for communication systems. These modules......

Shenzhen Gigaopto Technology Co., Ltd.

Address: 4/F, Building 1, High-tech Industrial Park, No.1 Dezheng Road, Shilong, Shiyan Subdistrict, Bao'an District, Shenzhen 518108, China

FTTX Fiber Optic Cable PLC Splitter Low Insertion Loss Compact Design by 1270nm - 1610nm

PLC planar waveguide type optical fiber splitter (PLC Splitter) is a kind of integrated optical power distribution device based on quartz substrate, has the advantages of small volume, wide wavelength range, high reliability, light uniformity is good, ......

Shenzhen HiLink Technology Co.,Ltd.

Address: 11F DongMing Building, Minzhi Street, Longhua District, Shenzhen , China

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