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28v gan rf power transistor

All 28v gan rf power transistor wholesalers & 28v gan rf power transistor manufacturers come from members. We doesn't provide 28v gan rf power transistor products or service, please contact them directly and verify their companies info carefully.

Total 61 products from 28v gan rf power transistor Manufactures & Suppliers
China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor wholesale

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...28V DC-4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V...

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Verified Supplier

Jiangsu

China TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor wholesale

Place of Origin:CN

Brand Name:Original Factory

Model Number:TGF2929-FL

TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ...

ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier

China HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency wholesale

Brand Name:Analog Devices Inc.

Model Number:HMC199MS8ETR

Place of Origin:Multi-origin

...RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power...

Shenzhen Sai Collie Technology Co., Ltd.
Verified Supplier

China 6-8GHz 50W GaN RF Power Amplifier Module for FPV and Anti-Drone wholesale

Brand Name:LDSK

Place of Origin:Guangdong, China

...RF Power Amplifier Module 6000-8000MHZ For FPV Autel Dji Boost FPV Range And Signal Strength 6-8Ghz 50W anti drone module Interface Definition N.O. Interface Name Remark 1 Amplifier Switch Amplifier high level turns on, low level turns off 3.3-5V, white line 2 GND Black Cable 3 GND Black Cable 4 28V Red Cable 5 28V Red Cable 6 28V...

Shenzhen Ladasky Technology Co.,Ltd
Verified Supplier

China Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency wholesale

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Active Member

Guangdong

China DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors wholesale

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

VBE Technology Shenzhen Co., Ltd.
Verified Supplier

Guangdong

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET wholesale

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Wisdtech Technology Co.,Limited
Verified Supplier

Guangdong

China 433MHz 20W GaN RF Power Amplifier Module For Anti Drone System Small Size wholesale

Brand Name:OEM

Place of Origin:China

... GaN RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In ...

Padi Fly Technology Co., Ltd
Verified Supplier

Guangdong

China RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors wholesale

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Mega Source Elec.Limited
Verified Supplier

China 2.4G 4G 50W 2300-2500MHz GaN RF Power Amplifier Drone Counter Module for Anti Drone System Mavic3 Fpv Djis Autel Anti Fpv with Isolation Protector wholesale

Brand Name:OEM/ODM

Model Number:JYT-G2.4-50

Place of Origin:China

... Voltage 5, Adjustable GAN Voltage 6, GAN Voltage 7, Isolation Protector 1.RF Data Item Spec. Remarks Frequency Range(MHz) 2300-2500 Bandwidth Range±10MHz Working Voltage 28V 24-30V Analog sweeping speed 250KHz Output Power (Max) ≥47dBm 50W Gain...

JinYaTong Technology(china) Co., Ltd
Site Member

Guangdong

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers wholesale

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  

Shenzhen Koben Electronics Co., Ltd.
Site Member

Guangdong

China PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS wholesale

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Angel Technology Electronics Co
Verified Supplier

Hongkong

China Harga Transistor Sd1480 Rf Transistor Npn Silicon Rf Power Transistor 28V 20A 125W 175MHz wholesale

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Shenzhen Kaigeng Technology Co., Ltd.
Active Member

Guangdong

China BFS505 15V  RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor wholesale

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Verified Supplier

Guangdong

China BFS505,115 15V  RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor wholesale

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

ChongMing Group (HK) Int'l Co., Ltd
Active Member

China Load Switch Rf Power Transistor / PWM High Power Mosfet Transistors wholesale

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Active Member

Guangdong

China MOSFET transistor k2837 2sk1020 2SK4115 k4115 TO-3P mrf150 rf power transistor wholesale

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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ShenZhen QingFengYuan Technology Co.,Ltd.
Verified Supplier

China High Speed Linear RF Power Amplifier With 800MHz 50W 47dBm 28V DC wholesale

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ...

Kimpok Technology Co., Ltd
Site Member

China 28V DC High Power RF Power Amplifier 43dBm Support 5750 MHz-5850 MHz wholesale

Brand Name:Ding Shen

Model Number:DS-LAM900-100W

Place of Origin:China

28V DC High Power Linear Power Amplifier 43dBm Support 5750 MHz ~ 5850 MHz ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit...

Shenzhen dingshen Industrial Co., Ltd
Active Member

China 37dBm 28V RF Power Amplifier For Wireless Communication Systems wholesale

Model Number:TDD570T5980M 5W-28V

Place of Origin:China

Brand Name:MXT

RF Power Amplifier 37dBm 28V 50Ω Product Description: RF Power Amplifier - Transmitter Power Amplifier for Radio Transmissions This Radio Frequency Power Amplifier (RFPA) is designed to amplify a signal from -10dBm to 0dBm, with the supply current 1500mA . It is suitable for COFDM signal transmission and has excellent noise performance of 3.0 dB. Its Power Added Efficiency (PAE) is between 10% to 20%, allowing for highly efficient power

Shenzhen Maixintong Technology Co., Ltd
Verified Supplier

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